汤桂兰1花日茂1孙振均2王健1
（1．安徽农业大学, 合肥230036 2. 中国农业大学资环学院, 北京 100094）
摘要：本试验采用15KeV不同剂量的低能氮离子束注入G菌，选育出两株高效聚磷菌K1、K2。其聚磷率明显高于试验出发菌，为G菌的1.43～3.89倍。经多次传代试验表明这两株菌遗传稳定性较好。根据生理生化及生长试验，这两株菌被鉴定为假单胞菌属细菌（Pseudomonas spp），K1、K2两株菌的最适生长条件为：温度为30℃； pH分别为6、8。菌量分别为OD＝0.6、0.4。K1菌是在3d时繁殖量达到最大，K2菌是在4d时繁殖量达到最大。
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Breeding and Characterization of Phosphorus-accumulating Strains by Ions Implantation
TANGGui-lan1, HUA Ri-mao1, Sun Zhen-jun2 , WANG Jian1
(1.AnHui Agriculture University,HeFei 230036, China 2. College of Resources and Environmental Sciences,China Agriculture University.BeiJing 100094,china)
Abstract：After irradiation of N+ ion beam at 15KeV on the G strain,the two mutant strain K1、K2 were obtained. Their accumulate ratio of phosphorus was increased by 1.43~3.89 times than that of original.Through morphological and biochemical method,the two strains were identified as Pseudomonas spp.The tests of culture conditions showed that the optimal temperature to two strains was 30℃.The optimal pH to K1 was 6, it was 8 to K2.The optimal time to K1was 3d and it was 4d to K2. The optimal OD to K1was 0.6 and it was 0.4 to K2。
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